| abstract |
When the insulating material is applied to the semiconductor material wiring by the gas plasma, the same material is retained, and an electrostatic chucking method in which a ceramic base material is stacked is excellent in plasma corrosion resistance and large. Even in an outer diameter, a retainer (electrostatic chuck) having high dimensional accuracy of each part is provided. In a retainer for semiconductor manufacture in which a substrate made of a plurality of aluminum nitride (AlN) -based ceramics is laminated by a high melting point metal layer and an adhesive layer, in particular, the aluminum nitride (AlN) ceramic substrate converts a compound of a Group 3a element into an isotope and is 0.01 It is assumed that it contains -1% by weight, the remainder is made substantially from aluminum nitride (AlN), and the average particle diameter of the AlN crystal is 2 to 5 m.n n n n Retainer for semiconductor manufacturing, Retaining method for semiconductor manufacturing, Electrostatic chucking method, Formation pattern of high melting point metal layer, Semiconductor wafer |