http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100553317-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F2013-222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A62C13-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F13-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-00 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
filingDate | 2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100553317-B1 |
titleOfInvention | Silicon optical device using silicon nanowires and manufacturing method thereof |
abstract | The present invention relates to a silicon optical device using a silicon nanowire and a method of manufacturing the same, and more particularly, doping erbium (Er) to the silicon nanowire and then oxidized to form a silicon dioxide film on the surface of the silicon nanowire, Quantum confinement effect and photoelectric conversion effect are imparted by the reduction of the diameter of silicon nanowires, and the light generated by the photoelectric change effect of silicon nanowires excites and attenuates the doped erbium when the current is applied thereto. Silicon nanowires that can generate light efficiently and can be effectively amplified by the microcavity effect of silicon nanowires by the silicon dioxide film formed by the oxidation can effectively amplify the silicon nanowires. It relates to a silicon optical device and a method for manufacturing the same.n n n n Silicon nanowires, erbium, quantum confinement effect, optical device |
priorityDate | 2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.