| abstract |
The present invention is a method of forming an iridium-containing film on a substrate from an iridium-containing precursor capable of decomposing and depositing iridium on the substrate, including, for example, oxidizing gases such as oxygen, ozone, air and nitrogen oxides. And decomposing the precursor in a surrounding environment whereby oxidation may be deposited on the substrate. Useful precursors include Lewis base-stabilized Ir (I) β-diketonates and Lewis base-stabilized Ir (I) β-ketoiminates. Subsequently, iridium deposited on the substrate is etched for electrode patterning, and then a dielectric or ferroelectric material is deposited on the electrode to thin film capacitor semiconductors such as DRAM, FeRAM, hybrid systems, smart cards, and communication systems. It can be used to manufacture the device. |