http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100549260-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate | 2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100549260-B1 |
| titleOfInvention | Method for producing silicon single crystal ingot |
| abstract | The present invention relates to a method for producing a high quality silicon single crystal ingot by controlling the convection of a silicon melt with one process variable. Silicon single crystal ingot manufacturing method according to the present invention, in the production of silicon single crystal ingot by Czochralski method, the rotation speed of the seed crystal, the rotation speed of the crucible, the amount of the silicon melt, the crucible size, the diameter of the ingot and the heater A first step of performing growth simulation of the silicon single crystal ingot under a first growth condition determined by a process variable including a kind; When the convection pattern of the silicon melt obtained in the simulation of the first stage is divided into the center cell and the outer cell, it is defined as the ratio of the heat quantity Qc transferred to the ingot by the center cell to the total heat quantity Qt transferred from the heater to the ingot. A second step of obtaining an R value Qc / Qt; If the R value obtained in the second step falls within the preset range, the first growth condition is selected as an appropriate condition. If the R value obtained in the second step falls outside the preset range, the process variable of the first growth condition is changed. A third step of repeating the first and second steps until the R value is 0.035 or more and 0.045 or less in the second growth condition; Growing a silicon single crystal ingot under the appropriate conditions selected in the third step.n n n n Ingot, silicone melt, convection, calories |
| priorityDate | 2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.