http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100548613-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B7-13 |
| filingDate | 2003-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100548613-B1 |
| titleOfInvention | Blu-ray light receiving element and manufacturing method |
| abstract | The present invention relates to a light-receiving element for a Blu-ray and a method of manufacturing the same; A p + barrier layer (PBL) formed by being buried in the substrate to a predetermined thickness and serving as an anode to which power is supplied from the outside; A p-type epitaxial layer formed on the p + barrier layer by epitaxial growth and having a depletion layer region generating an electron-hole pair (EHP) in response to light energy incident from the outside; A p + well layer formed by ion implanting impurities into a predetermined region formed by a masking process on the p-type epitaxial layer and performing electrical connection with the p + barrier layer; A polysilicon layer formed by depositing polysilicon on a predetermined window region formed by performing window etching on an oxide layer formed by an oxidation process on the p-type epitaxial layer; Implanting predetermined impurity ions on the polysilicon layer and performing heat treatment to diffuse into a predetermined depth of the p-type epitaxial layer, and include n + shallow diffusion layer serving as a cathode for receiving power supplied from the outside. Characterized in that configured.n n n Accordingly, the present invention has an effect of increasing the photoelectric conversion efficiency by easily receiving a Blu-ray having a short wavelength having a short penetration depth by forming a junction depth of the light receiving element in a shallow manner.n n n In addition, by configuring the polysilicon layer to be used as an external electrode, the present invention also provides an effect that the manufacturing process can be simplified since a process for forming a separate external electrode is not necessary.n n n n Substrate, barrier layer, epitaxial layer, well layer, oxide layer, polysilicon layer, external electrode, shallow diffusion layer, impurity, implant. |
| priorityDate | 2003-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.