http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100546204-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1999-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100546204-B1 |
| titleOfInvention | Method of forming interlayer insulating film of semiconductor device |
| abstract | The present invention relates to a method for forming an interlayer insulating film of a semiconductor device, in order to solve the problem that the operation speed and reliability of the device is degraded by using an interlayer insulating film having a high dielectric constant, a step of providing a semiconductor substrate having a lower wiring pattern formed And forming a silicon-rich oxide film over the entire structure, forming an FSG film over the silicon-rich oxide film, and subjecting the surface of the FSG film to a first nitrogen plasma, thereby forming a first nitride film. And etching the first nitride film and the FSG film so as to expose the upper portion of the lower wiring pattern to form a via hole and perform a degassing process, and performing a secondary nitrogen plasma treatment on the exposed FSG film on the sidewall of the via hole. By forming the interlayer insulating film through the step of forming the second nitride film, via resistance and short circuit phenomenon are reduced. Kill number and the method of forming an interlayer insulating film of a semiconductor device is disclosed that can improve the reliability of the device.n n n n FSG film, silicon-rich oxide film, nitrogen plasma treatment |
| priorityDate | 1999-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.