http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100543535-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06 |
| filingDate | 2003-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100543535-B1 |
| titleOfInvention | Manufacturing Method of Polycrystalline Silicon Solar Cell Using Leakage Current Reduction Technique |
| abstract | The fabrication method of polycrystalline silicon solar cells using a leakage current reduction technique that fabricates a new structure of solar cells using polycrystalline silicon substrates is less expensive than conventional single crystal silicon wafers and the conversion efficiency is close to that of conventional single crystal solar cells. Is disclosed. According to the present invention, after etching a p-type polycrystalline silicon substrate having a polycrystalline silicon grain boundary, an n-type doping layer is formed on the front and rear surfaces of the substrate, and the top surface of the n-type doping layer formed on the front surface of the substrate is flattened. The BSF layer and the rear electrode layer are formed together on the n-type doping layer formed on the rear surface of the substrate, and the grid finger electrode and the grid busbar electrode are printed on the front surface of the substrate to prevent leakage current. By greatly reducing the conversion efficiency is greatly improved.n n n n Solar cell, etching, polycrystalline, silicon, anti-reflection film, leakage current |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101447433-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101223055-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101453086-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8728880-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257528-B2 |
| priorityDate | 2003-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.