| abstract |
On the single crystal substrate, phosphorus (P) occupying the empty lattice point (baconcies) of boron (B) and boron occupying the baconcies of phosphorus exist, and boron phosphide (BP) containing boron and phosphorus as constituent elements Provided is a boron phosphide-based semiconductor device having a) -based semiconductor layer. The boron phosphide-based semiconductor device has a concentration higher than the atomic concentration of phosphorus occupying baconium of boron, and includes boron occupying phosphorus baconci, and p-doped p-type impurities of Group II element or Group IV element are added. A boron phosphide-based semiconductor layer.n n n n LED, boron phosphide (BP) -based semiconductor layer, zinc-blend, wurtzite, zinc sulfide |