http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100539465-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F2013-5672 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F13-15268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F13-472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F13-505 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100539465-B1 |
| titleOfInvention | Formation Method of Surface Blister for Si Layer Splitting |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a surface bubble for separating a silicon thin film. In particular, when an SOI wafer is manufactured by a smart-cut method, microcrack induced by hydrogen, which is an essential condition for thin film layer separation, It relates to a method in which surface bubbles appearing as a result of formation are formed.n n n According to the present invention, there is provided a method for forming a surface bubble for separating a thin film from an SOI substrate, comprising: a first step of thermally oxidizing a predetermined thickness of a first substrate; A second step of implanting ions into a predetermined depth deeper than the thickness of the thermal oxide film of the first substrate; A third step of bonding the ion implanted first substrate to a second substrate; A fourth step of separating the ion implanted thin film having the surface bubbles formed by microcracks by heat-treating the bonded first and second substrates in a range of 300 to 600 ° C. for 10 to 30 minutes; And it proposes a surface bubble forming method comprising a fifth step of polishing the separated thin film surface.n n n Therefore, when the SOI wafer is manufactured by smart-cut technology, the present invention reduces the heat treatment time and reduces the separation process error of the ion-injected silicon wafer by determining whether the thin film is separated by the formation of surface bubbles. Can be. |
| priorityDate | 2004-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.