| abstract |
A semiconductor device according to the present invention is a semiconductor device having a main conductor layer electrically connected to an electrode pad at one end thereof, an insulating layer having an opening on the main conductor layer, and a protruding electrode electrically connected to the main conductor layer through the opening. On the main body layer which protrudes from an opening part, it has the metal layer interposed between the main body layer and a protrusion electrode. As a result, since the metal layer has a metal layer on the main body layer protruding from the opening, the metal layer forms an alloy layer with the metal constituting the protruding electrode, and no gap is formed between the insulating layer and the main body layer even when the metal layer is blown into the protruding electrode. It is possible to provide a semiconductor device which can prevent agglomeration of moisture into voids and ensure high connection reliability. |