| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which protrusion electrodes are bonded to a electrode formed on a semiconductor substrate through a barrier metal, and to a method of manufacturing the same. It is a task.n n n On the electrode 5 formed on the semiconductor chip 2, the bumps 4 are bonded to each other via the barrier metal 30A formed by stacking the first to third conductive metal layers 31, 32, and 33A. In the conventional semiconductor device, among the plurality of conductive metal layers 31, 32, and 33A constituting the barrier metal 30A, the third conductive metal layer 33A positioned at the uppermost portion which is directly joined to the bump 4 is disposed at the lower portion thereof. It is positioned so as to cover the second conductive metal layer 32 made of a material that is weak against diffusion and oxidation resistance. |