Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate |
1998-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2006-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2006-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100530431-B1 |
titleOfInvention |
Process for forming a semiconductor device |
abstract |
The metal-semiconductor layer 26 is formed on the insulating layer 20, and the metal-semiconductor layer 26 is layered to have varying amounts of semiconductor and metal over the layer. In one embodiment, metal-semiconductor layer 26 has a relatively high silicon content near the bottom and top surfaces of the layer. At the midpoint, the layer is close to stoichiometric tungsten silicide. In another embodiment, a metal-semiconductor-nitrogen layer is formed that includes nitrogen near the bottom surface and is substantially free of nitrogen near the top surface. Layer 26 may be formed using chemical vapor deposition or sputtering. |
priorityDate |
1997-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |