http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100529429-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2003-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100529429-B1 |
| titleOfInvention | Semiconductor device and method for fabricating the same |
| abstract | The present invention is to improve the adhesion between the conductive plug formed in the interlayer insulating film and the capacitor formed on the interlayer insulating film.n n n On the semiconductor substrate 100, an interlayer insulating film 106 is formed to cover a transistor composed of a pair of impurity diffusion layer 102, a gate insulating film 103, and a gate electrode 104. On this interlayer insulating film 106, An adhesion layer 107 made of titanium oxide that is not oriented is formed. On the adhesion layer 107, a capacitor formed of a lower electrode 110, a capacitor insulating film 111, and an upper electrode 112 with a first conductive barrier layer 108 and a second conductive barrier layer 109 interposed therebetween. Is formed. The transistor and the capacitor are connected by the conductive plug 113 embedded in the interlayer insulating film 106 and the adhesion layer 107. |
| priorityDate | 2002-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.