http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100528454-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F222-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2003-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100528454-B1 |
| titleOfInvention | A thermally crosslinkable polymer for a bottom anti-reflective coating for photolithography, a composition for preparing a bottom anti-reflective coating using the same, and preparation method thereof |
| abstract | The present invention provides a standing wave generated in a photoresist fine image by preventing reflection occurring in the substrate layer under the photoresist layer during exposure in photolithography of a highly integrated semiconductor using short-wavelength ultraviolet rays of 250 nm or less. (standing wave) effect can be removed, and having a crosslinking function, an organic polymer for a bottom antireflective coating layer material represented by the formula (1) below, a composition for producing a bottom antireflective film using the same, and a method of manufacturing the same It is about.n n n [Formula 1] |
| priorityDate | 2003-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.