http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100524808-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100524808-B1 |
| titleOfInvention | Method for fabrication of dielectric layer using harp |
| abstract | The present invention is to provide a method of forming an insulating film using HARP that can improve the gap-fill characteristics and ensure the stability of the process while reducing the TAT, for this purpose, the present invention, a plurality of patterns having a predetermined interval on the substrate Forming a barrier insulating film made of LP-TEOS using a deposition method that does not use plasma along the profile having the plurality of patterns formed thereon, and forming an O 3 -TEOS layer on the barrier insulating film. Forming an insulating layer using HARP, including depositing a high aspect ratio process (HARP) insulating layer, gap-filling the plurality of patterns, and annealing the HARP insulating layer to remove seams existing in the HARP insulating layer. Provide a method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102790008-A |
| priorityDate | 2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.