| abstract |
FIELD OF THE INVENTION The present invention relates to photoresist monomers suitable for use in bilayer resists and to polymers containing such monomers, comprising a compound comprising a group of the formula The photoresist polymer of the present invention comprising a cyclic compound and a diacrylate-based compound, such as a crosslinking monomer, is greatly improved in etching resistance and is suitable for a thin resist process. It contains an appropriate amount of elements, which is not only suitable for a process using a two-layer resist, but also greatly increases the contrast ratio between the exposed area and the non-exposed area.n n n [Formula 4]n n n n n n n n Wherein R, R 1, R 2, R 3 and R 4 are each hydrogen, C 1 -C 10 is a straight or branched alkyl, ether group (-O-) linear or branched C 1 -C 10 alkyl, including . |