| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0385 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2002-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100518533-B1 |
| titleOfInvention |
Negative resist composition comprising base polymer having epoxy ring and Si-containing crosslinker and patterning method for semiconductor device using the same |
| abstract |
The negative resist composition according to the present invention consists of an alkali-soluble base polymer substituted with an epoxy ring, a silicon-containing crosslinking agent having multiple hydroxy functional groups, and a photoacid generator (PAG). In the method for forming a pattern of a semiconductor device according to the present invention, a fine pattern is formed by a BLR process using the negative resist composition according to the present invention. |
| priorityDate |
2002-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |