http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100517677-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-981 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1997-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100517677-B1 |
| titleOfInvention | Integrated circuit with differing gate oxide thickness and process for making same |
| abstract | A semiconductor process for producing two gate oxide thicknesses in an integrated circuit provided with a semiconductor substrate having a first region and a second region. The first region and the second region are laterally disposed relative to each other. Nitrogen species impurity distribution is then implanted into the first region of the semiconductor substrate. Thereafter, a gate dielectric layer is grown on the upper surface of the semiconductor substrate. The gate dielectric has a first thickness on the first region of the semiconductor substrate and a second thickness on the second region of the semiconductor substrate. The first thickness is less than the second thickness. In the CMOS embodiment of the present invention, the first region of the semiconductor substrate is made of p-type silicon, while the second substrate region is made of n-type silicon. Preferably, injecting the nitrogen species impurity distribution into the semiconductor substrate is accomplished by thermally oxidizing the first substrate region in the nitrogen containing atmosphere. In a preferred embodiment, the nitrogen containing atmosphere comprises N 2 O, NH 3 , O 2 and HCl in a 60: 30: 7: 3 ratio. In an alternative embodiment, the nitrogen containing atmosphere comprises NO, O 2 and HCl in a 90: 7: 3 ratio, but an approximate ratio of N 2 O, O 2 and HCl in 90: 7: 3. The implantation of nitrogen species impurities into the first substrate region 112 may be accomplished by a rapid thermal annealing process. |
| priorityDate | 1996-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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