| abstract |
According to the present invention, there is provided a honeycomb structure 1 having a plurality of flow holes 3 partitioned by the partition 2 and penetrating in the X-axis direction. This honeycomb structure is characterized by containing a Si phase whose lattice constant at room temperature is controlled to be 0.54302 to 0.54311 nm. The present invention provides a method for producing a honeycomb structure (1) comprising a firing step of firing a precursor of a honeycomb structure. The precursor contains a Si phase, and the firing process is performed using a kiln material that does not contain a boron-containing compound. Moreover, this invention provides the manufacturing method which suppresses the fall rate of Si content in the Si phase after a baking process with respect to Si content in the Si phase before a baking process to 10 mass or less in mass. The honeycomb structure is improved in thermal conductivity and excellent in heat shock resistance. |