http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100515583-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate | 2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100515583-B1 |
| titleOfInvention | Organic silicate polymer and insulation film comprising the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for forming a low dielectric insulating film of a semiconductor device. In particular, an organic silane compound capped with a silane compound, and a general silane compound or a silane oligomer are mixed in an organic sock end capable of thermal decomposition in an organic solvent. , An organosilicate polymer prepared by hydrolysis and condensation reaction by addition of water and a catalyst, a coating composition for forming an insulating film of a semiconductor device comprising the same, a coating composition for forming an insulating film of a semiconductor device further comprising a pore-forming organic material in the composition, A method for producing an insulating film of a semiconductor device coated with the composition and cured, and a semiconductor device comprising a low dielectric insulating film produced by the method.n n n The organosilicate polymer prepared according to the present invention has excellent thermal stability and mechanical strength, and the insulating film forming composition including the same can reduce the speed and power consumption of the semiconductor device and significantly reduce the mutual interference of metal wires. It can be used as a low dielectric wiring interlayer insulating film, and when applied to the insulating film, the obtained film suppresses phase separation phenomenon, and the organic material is thermally decomposed during the curing process to form pores, so it is easy to control fine pores and has excellent insulation. This has the effect of significantly lowering the density of the film. |
| priorityDate | 2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 141.