http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100513810-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K20-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100513810-B1 |
| titleOfInvention | FORMING METHOD OF Ti LAYER USING ATOMIC LAYER DEPOSITION BY CATALYST |
| abstract | The present invention is to provide a Ti film forming method using an atomic layer deposition method using a catalyst that can overcome the weak characteristics of the PECVD thermal process when forming the Ti film, the present invention, atomic layer deposition method Introducing a substrate into the reactor; Preheating the substrate; Simultaneously injecting TiCl 4 , a source gas of Ti, and an amine catalyst having a non-covalent electron pair into the reactor to form a Ti film on the substrate; Stopping inflow of the TiCl 4 and the catalyst into the reactor and removing unreacted material; And surface-treating the Ti film, and repeatedly forming the Ti film and removing an unreacted substance until the Ti film has a desired thickness. A Ti film forming method using the method is provided. |
| priorityDate | 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.