http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100512171-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2003-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100512171-B1
titleOfInvention Compositon for a bottom layer resist
abstract The present invention provides a novel lower layer resist composition having excellent antireflection function and resistance to dry etching in a two layer resist process using a wavelength of 193 nm. This lower layer resist composition contains a polymer represented by the following formula (1).n n n <Formula 1>n n n n n n n n In Formula 1, R is a hydrogen or methyl group, m / (m + n) = 0.5 ~ 1.0 and n / (m + n) = 0 ~ 0.5.
priorityDate 2003-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 37.