http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100506816-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100506816-B1 |
| titleOfInvention | Storage node of a capacitor in a semiconductor device and method for forming the storage node |
| abstract | A lower electrode of a semiconductor device capacitor and a method for forming the same are disclosed. After forming a first insulating layer pattern having a first contact hole, a contact plug for a lower electrode is formed in the contact hole, and a first etching ratio of the first insulating layer pattern is formed on the first insulating layer pattern and the contact plug. A second insulating film having a high second etching ratio is formed. The second insulating layer is etched to form a second insulating layer pattern having a second contact hole exposing the contact plug. In this case, the etching of the first insulating layer pattern around the contact plug is somewhat alleviated by the first etching ratio and the second etching ratio. And continuously forming the conductive thin film for the lower electrode on the sidewall and the bottom surface of the second contact hole, and then removing the second insulating layer pattern. In addition, a protective film may be formed before the conductive thin film is formed. In the state where the conductive thin film is formed, the conductive thin film can also be applied as a metal wiring. |
| priorityDate | 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.