| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2003-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100504698-B1 |
| titleOfInvention |
Phase change memory device and method for forming the same |
| abstract |
The phase change memory device of the present invention has a sharp contact area between the phase change material film and the electrode. The current density in such sharp contact areas is increased and consequently enables low voltage operation, thereby increasing the degree of integration of the device. |
| priorityDate |
2003-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |