| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12528 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-01 |
| filingDate |
2003-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100504051-B1 |
| titleOfInvention |
Wiring structure, method of fabricating the same, and display apparatus including the same |
| abstract |
An object of the present invention is to prevent a short between a wiring structure and another electrode.n n n According to the configuration of the present invention, contact holes are formed in the gate insulating film 12 made of SiO 2 and the interlayer insulating film 13 stacked thereon made of SiN by etching with buffered hydrofluoric acid. The contact hole is made of a first protective metal layer 170 made of a high melting point metal, a wiring layer 172 made of a metal having a lower resistance than a high melting point metal, and a high melting point metal, and comprises a gate insulating film 12. A thicker second protective metal layer 174 forms the electrodes 53 stacked in this order. |
| priorityDate |
2002-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |