Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 |
filingDate |
2002-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100502685-B1 |
titleOfInvention |
Active matrix substrate and method of fabricating the same |
abstract |
The active matrix substrate includes a substrate 1 made of resin and a polysilicon thin film diode 11 formed on the substrate 1. The polysilicon thin film diode 11 may be a lateral diode having a region in which impurities are doped. Alternatively, the polysilicon thin film diodes 11 are electrically connected in parallel with each other and arranged in opposite directions. |
priorityDate |
2001-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |