http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100495975-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100495975-B1 |
| titleOfInvention | Chemical Mechanical Polishing Slurry Composition for Polishing Tungsten Metal Layer |
| abstract | A chemical-mechanical polishing slurry composition useful for polishing tungsten metal films is disclosed. The slurry composition includes an abrasive, an oxidizer, a tungsten polishing enhancer, a dispersion stabilizer, and water, and has a pH of 2-9. The abrasive is fumed silica having a specific surface area of 50 to 300 m 2 / g, the oxidizing agent is hydrogen peroxide, the tungsten polishing enhancer is ethanesulfonic acid and / or methylformamide, the dispersion stabilizer is phosphoric acid, and the silicon oxide film polishing inhibitor May be lactic acid. Such a chemical-mechanical polishing slurry composition is particularly useful for planarizing the film by increasing the polishing efficiency of tungsten in the process for forming the tungsten plug in the metal wiring. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8048808-B2 |
| priorityDate | 2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.