| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d680cde077fa4434553a3db36cdfeed0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 |
| filingDate |
2005-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f286b75830b3c5e79bb13df479371d19 |
| publicationDate |
2005-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100495925-B1 |
| titleOfInvention |
Optical absorber layers for solar cell and manufacturing method thereof |
| abstract |
The present invention CuInSe 2 , used as a light absorption layer for solar cells The present invention relates to a light absorbing layer for a solar cell and a method of manufacturing the same, wherein the CuGaSe 2 and CuIn 1-x Ga x Se 2 thin films are stacked in a multi-layered manner, and the present invention includes In and Se on a substrate. Forming an InSe thin film by organometallic chemical vapor deposition using a single precursor; Forming a Cu 2 Se thin film on the InSe thin film by an organometallic chemical vapor deposition method using a Cu precursor; Forming a CuGaSe 2 thin film on the Cu 2 Se thin film by an organometallic chemical vapor deposition method using a single precursor including Ga and Se; And characterized by forming a multi-layer thin film of a single precursor and Cu CuGaSe by metal-organic chemical vapor deposition using a precursor 2 / CuInSe 2 structure containing In and Se on the CuGaSe 2 thin film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100994830-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009076322-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008147113-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008147113-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100982475-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008156337-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100850000-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011074784-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008156337-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011074784-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101584376-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101094326-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101081309-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008111738-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009076322-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101395028-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101455832-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109082650-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8747706-B2 |
| priorityDate |
2005-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |