http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100495808-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1998-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100495808-B1 |
| titleOfInvention | Manufacturing Method of Thin Film Transistor |
| abstract | A gate electrode is formed on the substrate, and an amorphous silicon layer and a doped amorphous silicon layer are formed after covering the gate insulating film. A source electrode and a drain electrode are formed of an alloy of molybdenum and tungsten on the doped amorphous silicon layer, and the doped amorphous silicon layer is dry etched. In the dry etching of the doped amorphous silicon layer, the photoresist pattern used to form the source electrode and the drain electrode or the source electrode and the drain electrode is etched as a mask, and HCl + CF 4 is used as the dry etching gas. . The doped amorphous silicon layer is etched and then subjected to a helium plasma process in situ. In this way, the current characteristics in the off state deteriorated in the ashing process can be restored while maintaining the current characteristics in the on state of the thin film transistor. Here, when HCl + CF 4 + O 2 is used as the dry etching gas, the helium plasma process may be omitted and the characteristics of the thin film transistor may be improved. In addition, in the case where the source electrode and the drain electrode are made of aluminum or an aluminum alloy, an oxygen plasma process may be performed in situ after dry etching to prevent corrosion of the aluminum or aluminum alloy. |
| priorityDate | 1998-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.