http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100494127-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S285-923
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-28
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2003-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100494127-B1
titleOfInvention Method for forming plug in semiconductor device
abstract The present invention relates to a method of forming a plug of a semiconductor device, the method comprising: forming a gate line formed of a stacked structure of a gate oxide film, a doped polysilicon film, and a hard mask insulating film on a semiconductor substrate; Forming a source / drain region in both of the gate substrates; Forming a nitride film on a substrate resultant including the gate line; Patterning the nitride film so that the nitride film is present on the gate line, on both sides, and on an upper surface of the source / drain region; Forming an interlayer insulating film on the substrate resultant; CMPing the interlayer insulating film and the nitride film to expose the upper portion of the gate line; Forming a contact hole by etching the interlayer insulating film and the nitride film to expose the source / drain regions; And forming an amorphous polysilicon layer to fill the contact hole, wherein the amorphous polysilicon layer sprays the reaction gas of SiH 4 and AsH 3 into a vertical reactor to a pressure of 1.0 Torr at a temperature of 490 to 530 ° C. Form from.
priorityDate 2003-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419586572
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359596

Total number of triples: 15.