http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100494127-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S285-923 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-28 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2003-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2005-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2005-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100494127-B1 |
titleOfInvention | Method for forming plug in semiconductor device |
abstract | The present invention relates to a method of forming a plug of a semiconductor device, the method comprising: forming a gate line formed of a stacked structure of a gate oxide film, a doped polysilicon film, and a hard mask insulating film on a semiconductor substrate; Forming a source / drain region in both of the gate substrates; Forming a nitride film on a substrate resultant including the gate line; Patterning the nitride film so that the nitride film is present on the gate line, on both sides, and on an upper surface of the source / drain region; Forming an interlayer insulating film on the substrate resultant; CMPing the interlayer insulating film and the nitride film to expose the upper portion of the gate line; Forming a contact hole by etching the interlayer insulating film and the nitride film to expose the source / drain regions; And forming an amorphous polysilicon layer to fill the contact hole, wherein the amorphous polysilicon layer sprays the reaction gas of SiH 4 and AsH 3 into a vertical reactor to a pressure of 1.0 Torr at a temperature of 490 to 530 ° C. Form from. |
priorityDate | 2003-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.