http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100486874-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100486874-B1 |
| titleOfInvention | Bit line formation method of semiconductor device |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n The present invention relates to a method for forming a bit line of a semiconductor device.n n n 2. Technical problem to be solved by the inventionn n n When forming a bit line having a structure of titanium / titanium nitride / tungsten / anti-reflective film, the plug polysilicon and the titanium under the bit line react to form titanium silicide (TiSi 2 ), and the titanium silicide ( When TiSi 2 ) is excessively aggregated, the contact resistance is increased to solve the problem of deteriorating the electrical characteristics of the device.n n n 3. Summary of the Solution of the Inventionn n n Titanium is deposited and annealed after forming the bit line to form a titanium silicide (TiSi 2 ) to have a uniform distribution on the top of the plug polysilicon to be used as a diffusion barrier layer between the polysilicon and the titanium film. back) After removing unreacted titanium (Ti), barrier layer is formed and bit line is formed. |
| priorityDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.