http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100484067-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
filingDate 2002-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100484067-B1
titleOfInvention Method For Manufacturing Semiconductors
abstract The present invention discloses a method for manufacturing a semiconductor device. According to this, the natural oxide film of the lower layer polycrystalline silicon layer in the contact hole is etched, such as BHF (Buffered HF) containing a surfactant, before the upper layer polycrystalline silicon layer is contacted with the lower layer polycrystalline silicon layer via the contact hole of the interlayer insulating film. Removed by solution. Then, the remaining florin (F) component of BHF is washed at the bottom of the contact hole with hydrogen water or with hydrogen water and ultrapure water.n n n Therefore, the present invention completely removes the remaining florin (F) component at the bottom of the contact hole, so that the upper and lower polysilicon layers may contact the lower polycrystalline silicon layer even when the upper polycrystalline silicon layer is contacted with the lower polycrystalline silicon layer. Does not generate water spots (or water film). As a result, poor contact of the upper and lower polysilicon layers can be prevented, and further, yield reduction of the good can be prevented.
priorityDate 2002-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020010264-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10163127-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000028720-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001070898-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6372413-B2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635
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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419513958
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962

Total number of triples: 24.