http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100482180-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100482180-B1 |
| titleOfInvention | Fabricating method of semiconductor device |
| abstract | The present invention relates to a semiconductor device manufacturing method that can effectively remove the copper oxide film present on the copper wiring in accordance with the progress of the process in the wiring connecting portion for the electrical connection between the elements of the semiconductor device applying the copper wiring,n n n The method of manufacturing a semiconductor device according to the first embodiment of the present invention includes forming an insulating layer on a semiconductor substrate, depositing a conductive material on the insulating layer, and then selectively patterning the first wiring to form a first wiring; Stacking an insulating material on the entire surface of the substrate including the first wiring to form an interlayer insulating layer, and selectively patterning the interlayer insulating layer to expose a predetermined portion of the first wiring to form a contact hole or a via hole And removing the natural oxide film by plasma treating a natural oxide film formed by naturally oxidizing the first wiring on the surface of the first wiring under a hydrogen / carbon monoxide gas atmosphere. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101366520-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100935768-B1 |
| priorityDate | 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.