http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100480232-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2000-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100480232-B1 |
| titleOfInvention | Method for forming the bit line contact of semiconductor device |
| abstract | The present invention relates to a method of forming a contact hole for a bit line in the method of forming a semiconductor memory device, which can reduce the process temperature by forming an SOG film as an interlayer insulating film when forming the bit line, and thermal bud jet when forming a metal gate in a next-generation device. Can be easily controlled, and the heat treatment of the SOG film can be achieved by using an electron beam to secure a dense SOG film, thereby improving the characteristics, reliability and yield of the semiconductor device, and thereby enabling high integration of the semiconductor device. The invention relates to an invention with very useful and effective advantages. |
| priorityDate | 2000-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.