http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100478488-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100478488-B1 |
| titleOfInvention | Semiconductor device and fabrication method thereof |
| abstract | The present invention relates to a method of forming a trench oxide film of a semiconductor device, and an object thereof is to provide a method of forming a trench oxide film so that a trench is completely embedded without voids being formed. To this end, in the present invention, when etching to form a trench, the inner wall of the trench is etched in multiple steps using a pullback wet etching process of a silicon nitride film, and an insulating film is first embedded in a stepped corner portion. It is characterized by forming a trench oxide film thereon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170015859-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101867755-B1 |
| priorityDate | 2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.