| abstract |
Industrial Applicability The present invention provides semiconductor light emission capable of improving external quantum efficiency, reducing operating voltage, and improving reliability by preventing mutual diffusion of metals constituting an electrode while achieving both resistance and high reflectance in an electrode structure. Provided is a semiconductor device having a device, a method for manufacturing the same, and a semiconductor light emitting device, or a semiconductor light emitting device capable of improving external quantum efficiency by suppressing scattering and absorption of light at an electrode, and a semiconductor device having the semiconductor light emitting device. To provide.n n n To this end, the present invention, the p-type electrode 26 for injecting current into the InGaN active layer 22 on the sapphire substrate 20, the ohmic contact (ohmic contact) with the p-type GaN layer 24 is taken Ni layer 32 as an ohmic electrode, Mo layer 33 as a barrier electrode, Al layer 34 as a high reflectance electrode, Ti layer 35 as a barrier electrode, and a submount on a lead-frame 12 and a five-layer structure of the Au layer 36 serving as an overcoat electrode for improving contact with the submount (13). |