http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100461238-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate | 2002-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100461238-B1 |
| titleOfInvention | Method for forming GaN epitaxy layer |
| abstract | The present invention relates to a method for forming a gallium nitride epi layer, comprising: a first step of forming a bend by performing an etching process on an upper portion of a substrate; A second step of growing gallium nitride in the formed valley of the bend; The third step of growing the side of the gallium nitride grown on the corrugated site to fill the corrugated site and sealing the substrate with a gallium nitride epi layer, the surface of the substrate using a reactive ion etching (RIE) process An arbitrary curvature is formed on the top, and a gallium nitride epitaxial layer using lateral growth is grown on the top, thereby reducing the defect concentration. |
| priorityDate | 2002-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.