http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100459885-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-454 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100459885-B1 |
| titleOfInvention | Method for forming a metal electrode on the semiconductor |
| abstract | The present invention describes a method of forming a metal electrode of a semiconductor device for lowering the contact resistance at ohmic contact that occurs at an interface when forming a metal electrode on a GaN compound semiconductor. The method for forming a metal electrode of a semiconductor device according to the present invention comprises a novel chemical surface treatment method for reliably removing an oxide film that causes an increase in contact resistance, that is, a surface of a p-GaN layer in which an oxide film is formed with a mixture of hydrochloric acid and nitric acid By applying a method of conducting semiconductor surface treatment using a solution of aqua regia, KOH aqueous solution, hydrofluoric acid, BOE (Buffered Oxide Etcher), Ammonium Sulfide, etc., singly or in combination, a value of less than one-hundredth of the conventionally disclosed contact resistance An ohmic contact between the semiconductor-metal electrode having a low contact resistance value of is obtained. |
| priorityDate | 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.