| abstract |
A wiring of a semiconductor device having a double capping film and a method of forming the same are disclosed. In the wiring of the semiconductor element according to the present invention, a double layer of silicon nitride / silicon carbide is formed as a capping film on CMP (Chemical Mechanical Polishing) copper as copper damascene wiring. According to the present invention, while maintaining the high etching selectivity and the low dielectric constant, which is the advantage of silicon carbide, it is possible to simultaneously obtain the good leakage suppression characteristic, which is the advantage of silicon nitride. |