http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100459696-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B57-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2001-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100459696-B1 |
| titleOfInvention | Chemical mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| abstract | A chemical mechanical polishing slurry, a chemical mechanical polishing method, and a shallow trench device isolation method employing the same are disclosed. According to one aspect of the invention, a chemical mechanical polishing oxide slurry consists of an aqueous solution comprising abrasive particles and two or more different passivation agents and removal rate accelerators. Preferably, the aqueous solution comprises deionized water, and the abrasive particles include ceria, silica, alumina, titania, zirconia and germania. It is a metal oxide selected from the group consisting of. In addition, the first passivation agent may be an anionic, cationic, or nonionic surfactant, and the second passivation agent may be phthalic acid and salts thereof. In one example, the first passivation agent is poly-vinyl sulfonic acid and the second passivation agent is potassium hydrogen phthalate. Removal rate accelerator is ammonium hydrogen phosphate. This slurry exhibits a high removal selectivity of oxide to silicon nitride film. |
| priorityDate | 2001-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.