http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100456694-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2002-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100456694-B1 |
| titleOfInvention | Ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof and methods of forming same |
| abstract | A ferroelectric capacitor having a conductive plug is disclosed. The conductive plug has a base and a protrusion protruding from the base. The base portion has a first cross-sectional width and the protrusion has a second cross-sectional width smaller than the first cross-sectional width. A conductive film is positioned on the protrusion that is opposite the base. The conductive plug is formed by sequentially stacking a first insulating film, an etch stop film, a second insulating film having an etch rate slower than that of the first insulating film, and a blocking film, and patterning the blocking film, the second insulating film, the etch stop film, and the first insulating film. Forming a recess having a first cross-sectional width, further etching the second insulating film to increase the width of the recess in the second insulating film to a second cross-sectional width larger than the first cross-sectional width, and filling a conductive film in the recess To form. |
| priorityDate | 2002-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.