| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100455737-B1 |
| titleOfInvention |
Gate oxide film formation method of semiconductor device |
| abstract |
The present invention discloses a method for forming a gate oxide film having a laminated structure having an effective oxide film thickness of 40 kPa or less and having high reliability and low leakage current. The method for forming a gate oxide film according to the present invention includes performing a heat treatment using a NO gas on a silicon substrate to form a nitride oxide film having a uniform thickness, and depositing a tantalum oxide film (Ta 2 O 5 ) on the nitride oxide film. And depositing a TEOS oxide film on the tantalum oxide film Ta 2 O 5 , and nitriding the TEOS oxide film through heat treatment in an N 2 O atmosphere. |
| priorityDate |
1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |