| abstract |
FIELD OF THE INVENTION The present invention relates to ferroelectric thin films formed from solution compositions by sol-gel processing, which have a large amount of polarization, significantly improved retention and imprint properties compared to PZT, fine particles and good film properties, uniform electrical properties and low leakage. It has a current and is suitable for nonvolatile memories. Ferroelectric thin film of the present invention is a general formula (Pb V Ca W Sr X La Y ) (Zr Z Ti 1-Z ) 0 3 (wherein 0.9≤V≤1.3, O≤W≤0.1, O≤X≤0.1, O <Y ≦ 0.1, O <Z ≦ 0.9, and at least one of W and X is not 0), and the metal oxide is constituted at a ratio which provides the metal atomic ratio represented by the above formula. And a hydrolyzable organometallic compound thereof, a hydrolyzable organometallic compound thereof, a partially hydrolyzed product and / or a polycondensation product of the hydrolyzable organometallic compound. |