| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2001-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100450221-B1 |
| titleOfInvention |
THE METHOD OF MANUFACTRING SINGLE CRYSTAL GaN SUBSTRATE AND SINGLE CRYSTAL GaN SUBSTRATE |
| abstract |
The present invention provides a GaN substrate manufacturing method and a GaN substrate having a small penetration potential and no dislocation bundles on the surface of the substrate and causing no cleavage of the cleaved surface. In the means, the GaN single crystal ingot is sliced in a plane parallel to the growth direction to form a substrate. The dislocation travels parallel to the surface, resulting in a low dislocation density. It is also characterized by growing GaN as seed crystals. |
| priorityDate |
2000-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |