http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100449772-B1

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filingDate 2001-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100449772-B1
titleOfInvention Electrooptical device, manufacturing method for manufacturing electrooptical device, and electronic equipment
abstract In particular, the substrate floating effect caused by the channel region of the transistor made of the single crystal silicon layer covered by the insulating film becomes electrically floating, thereby preventing electrical characteristics of the device. The channel region 1a 'of the semiconductor layer 1a has an extension 201. The end of the extension 201 is connected to the contact hole 202. The contact hole 202 is connected to the connection wiring 203. One end of the connection wiring 203 is connected to the contact hole 202 as described above, and is connected to the light shielding film 11a through the adjacent contact hole 204.
priorityDate 2000-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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