http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100449648-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-42
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filingDate 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100449648-B1
titleOfInvention An effective dry etching process of actinide oxides and their mixed oxides in cf4/o2/n2 plasma
abstract The gas phase etching of actinium oxide from the substrate using plasma power involves preheating and exposing the actinium oxide on the substrate in a processing chamber filled with a fluorine-containing gas and thereby exposing it with plasma power. Etching the actinium oxide from the substrate.
priorityDate 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.