http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100447284-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2002-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100447284-B1 |
| titleOfInvention | Method of cleaning chemical vapor deposition chamber |
| abstract | A method of cleaning a chemical vapor deposition chamber for use in depositing a titanium film is disclosed. A method of cleaning a chemical vapor deposition chamber for depositing a refractory metal layer on a substrate, wherein the chamber is plasma-treated with a first gas containing nitrogen (N) and hydrogen (H) to nitrate the refractory metal layer attached to the chamber. Dilute the reaction byproduct in the chamber. The chamber is in-situ cleaned with a second gas to remove the nitrided refractory metal layer attached to the chamber. The chamber is plasma treated with a third gas containing nitrogen (N) and hydrogen (H) to remove reaction byproducts in the chamber. Plasma treatment of the chamber in a gas atmosphere containing bovine (N) and hydrogen (H) before and after the in-situ chamber cleaning step can increase the cleaning efficiency and suppress the generation of reaction by-products. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150104404-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102172753-B1 |
| priorityDate | 2002-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.