http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100447234-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100447234-B1 |
| titleOfInvention | Method for forming interconnect structures of semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring of a semiconductor device that can improve the reliability by improving the buried characteristics of the metal wiring, comprising the steps of: forming a contact hole and an upper metal wiring trench in an insulating film on the lower metal wiring; Forming a barrier metal layer on the front surface and a metal seed layer in sequence; using a metal aqueous solution in which the metal material constituting the metal seed layer is saturated and dissolved, and naturally depositing a metal material caused by a difference in solubility that varies with temperature change And growing a metal layer by using a driving force to fill a metal material in the contact hole and the trench. |
| priorityDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.