http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100445757-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100445757-B1 |
| titleOfInvention | Slurry For Polishing Metal Lines |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing slurry composition used in a chemical mechanical polishing / planarization (CMP) process for the purpose of planarization of wafers in the manufacture of semiconductor devices, and more particularly, to fine metal oxide powders, silver compounds, and poly ( Acrylic acid), nitric acid, ammonia water and deionized water comprising a slurry composition for polishing the metal wire, using the polishing slurry composition of the present invention, it is possible to compensate the problems of erosion and dishing occurs during polishing. |
| priorityDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.