| abstract |
A liquid precus comprising a metal is applied to the substrate 18 to form the layered superlattice material 30, bent with RTP, and annealed. In order to obtain good electrical properties, it is necessary to bake and anneal the substrate 18 with RTP in oxygen, except for the high bismuth content fructus.n n n Transition bismuth between 110% and 140% of the stoichiometry and an RTP temperature of 750 ° C are optimal. The film is formed of two layers 30A and 30B, the first layer using stoichiometric precursor and the second layer using transient bismuth sprayers. |